Lately, the electronics business has witnessed a paradigm shift in energy administration options, significantly within the realm of charging units. The arrival of gallium nitride (GaN) know-how has revolutionized the best way engineers method energy conversion and supply programs, successfully difficult the long-standing dominance of silicon-based chargers.
This transformation might be attributed to GaN’s exceptional materials properties. These embrace a wider bandgap, greater breakdown voltage, and superior thermal conductivity in comparison with its silicon counterpart.
Because of this, GaN-based chargers boast enhanced effectivity, diminished dimension, and decrease vitality losses, providing an unprecedented stage of efficiency that caters to the rising calls for of recent digital units.
On this article, we roundup three latest GaN merchandise that harness the complete potential of GaN know-how to ship quicker, extra environment friendly, and environmentally pleasant charging experiences.
GaN SoC for Closed-loop Management
For its half, Navitas Semiconductor recently launched its GaNSense Control device, a GaN-based system-on-chip (SoC) designed for quick charging functions. The GaNSense Control offers real-time, closed-loop management of GaN energy units, permitting for improved effectivity and reliability, in response to the corporate.
GaNSense Management ICs present real-time, closed-loop management of GaN energy units. Picture used courtesy of Navitas Semiconductor
One of many important options of the GaNSense Management ICs is their excessive stage of integration. The ICs embrace digital and analog circuits, gate drivers, and safety options in a single package deal, lowering the necessity for exterior parts and simplifying the design course of.
The GaNSense Management IC additionally provides real-time present and voltage sensing capabilities. The answer additionally offers a complete and easy-to-use portfolio of co-packaged and standalone options, providing a excessive diploma of flexibility for energy designers.
This consists of NV958x high-frequency quasi-resonant (HFQR) flyback controllers with GaNSense power ICs and NV97xx synchronous rectifier (SR) controllers with energy FETs. Navitas claims these present most effectivity at any load situation in comparison with typical rectifiers.
GaN-based Flyback Switcher ICs Boast Excessive Effectivity
In the meantime, Energy Integrations recently announced the launch of a brand new household of 900 V GaN-based flyback switcher ICs, referred to as InnoSwitch3. This new line of ICs which embrace InnoSwitch3-EP and InnoSwitch3-AQ are primarily based on Energy Integrations’ FluxLink technology.
FluxLink offers a totally remoted gate drive with out the necessity for optocouplers or secondary aspect suggestions circuitry. They’re additionally appropriate with Energy Integrations’ PowiGaN technology, which additional improves effectivity by lowering switching and conduction losses.
The InnoSwitch3 ICs are designed to be used in remoted flyback topologies, that are generally utilized in energy adapters and chargers. The ICs function a large enter voltage vary, as much as 1700 V, and may help output energy as much as 100 W. Extra data might be discovered within the information sheets for the InnoSwitch3-EP and the InnoSwitch3-AQ.
The InnoSwitch3-AQ is a CV/CC QR flyback switcher IC with Fluxlink suggestions for automotive designs. Picture used courtesy of Power Integrations
In an EV charging system, InnoSwitch3 ICs can be utilized to transform the AC energy to the DC energy required to cost the EV battery.
The excessive energy density of the ICs can result in important warmth technology, which may have an effect on system efficiency and reliability. To deal with this challenge, Energy Integrations says it has developed a variety of reference designs and software notes that present steering on thermal administration strategies. These strategies embrace heatsink design, thermal interface supplies, and correct airflow design.
Reference Design For GaN-based On-board Charging
GaN Methods likewise recently rolled out a latest GaN resolution with its new GaN-based 11 kW 800V On-Board Charger (OBC) Reference Design for electrical automobile (EV) charging programs. This reference design is geared toward fixing frequent issues that plague typical charging programs, together with dimension, weight, and value.
Based on the corporate, one of many key advantages of the OBC reference design is its excessive energy density, which is 36% greater than that of silicon-based chargers.
The GaN-based 11 kW 800 V OBC Reference Design shrinks BOM prices whereas boasting energy density. Picture used courtesy of GaN Systems
GaN Methods says that its OBC reference design additionally provides excessive effectivity—as much as 98%. This not solely helps to cut back the working prices of the charger but additionally improves the general vary of the EV. The excessive energy density and small footprint of the reference design make it an excellent resolution for EV charging functions, the place area is at a premium.
Based on the corporate, the GaN-based OBC reference design offers elevated reliability and sturdiness as a result of greater voltage and temperature scores of GaN units and allows the charger to function at greater temperatures with out the chance of failure.
Extra Forward this 12 months in GaN for Charging?
The discharge of those progressive merchandise is revolutionizing the charging panorama and it will likely be intriguing to witness the GaN developments that the upcoming yr has in retailer.